Record #185003 - GSI Repository

PETMEM

Piezoelectronic Transduction Memory Device

Coordinator	AIXACCT SYSTEMS GMBH ; IBM Research GmbH ; EIDGENOSSISCHE MATERIALPRUFUNGS- UND FORSCHUNGSANSTALT ; Max Planck Society ; SOLMATES BV ; The Electrospinning Company Limited ; SINTEF ; NPL MANAGEMENT LIMITED ; Edinburgh Napier University ; Ghent University ; Bio Nano Centre Ltd ; DCA-INSTRUMENTS OY ; STIFTELSEN SINTEF
Grant period	2015-12-01 - 2019-05-31
Funding body	European Union
Call number	H2020-ICT-2015
Grant number	688282
Identifier	G:(EU-Grant)688282

Note: Computer clock speeds have not increased since 2003, creating a challenge to invent a successor to CMOS technology able to resume performance improvement. The key requirements for a viable alternative are scalability to nanoscale dimensions – following Moore’s Law – and simultaneous reduction of line voltage in order to limit switching power. Achieving these two aims for both transistors and memory allows clock speed to again increase with dimensional scaling, a result that would have great impact across the IT industry. We propose to demonstrate an entirely new low-voltage, memory element that makes use of internal transduction in which a voltage state external to the device is converted to an internal acoustic signal that drives an insulator-metal transition. Modelling based on the properties of known materials at device dimensions on the 15 nm scale predicts that this mechanism enables device operation at voltages an order of magnitude lower than CMOS technology while achieving 10GHz operating speed; power is thus reduced two orders.

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Record created 2016-02-14, last modified 2023-02-14

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