Record #198593 - GSI Repository

3C-SiC Si

Development of a new disruptive semiconductor technology to produce more efficient, smaller, lighter, and more robust power switches.

Coordinator	Anvil Semiconductors (United Kingdom)
Grant period	2016-06-01 - 2016-09-30
Funding body	European Union
Call number	H2020-SMEINST-1-2016-2017
Grant number	729083
Identifier	G:(EU-Grant)729083

Note: Anvil Semiconductors has developed a unique technology to enable the production of Silicon Carbide (SiC) power switches at a similar cost to conventional Silicon by growing thin layers of SiC by heteroepitaxy on Silicon wafers rather than using expensive bulk SiC substrates. This innovation enables wafer costs to be reduced by a factor of 20 and opens up the possibility of fabricating SiC devices at similar costs to those of Silicon. Power devices such as MOSFETS and Schottky Barrier Diodes (SBDs) utilising Anvil’s SiC technology instead of silicon enable systems to be more efficient, smaller, lighter, cheaper and more robust. Electronic systems for electric vehicles, industrial machines, photovoltaics, LED lighting, wind turbines, power factor correction, uninterruptible power supplies, and the Smart Grid, will all be more efficient, smaller, more robust and cheaper. Examples of customer benefits from the use of such devices include: 10% savings on fuel consumption in a hybrid car; critical efficiency savings (4%) and size reduction (25%) in solar inverters; 10% increase in efficiency power usage in data centres.

Recent Publications

There are no publications

Record created 2016-11-19, last modified 2023-02-08

Similar records

Add to personal basket
Export as Author List with IDs BibTeX (UTF-8), EndNote XML, EndNote Text, RIS, MARC, Print MARC, MARCXML, DC,
Request correction
Submit fulltext

GSI Homepage \| GSI Library \| English Deutsch \| guest :: login GSI Repository
Search	Submit	Personalize Your alerts Your baskets Your searches	Help