Record #242647 - GSI Repository

GO2NANO

Structural and electrical investigation of 2D materials and their heterostructures for groundbreaking nanoelectronic devices and applications

Grant period	2022-09-01 - 2024-08-31
Funding body	European Union
Call number	H2020-MSCA-IF-2020
Grant number	101032216
Identifier	G:(EU-Grant)101032216

Note: Many things that are now part of our daily lives were inconceivable just few years ago. This is mostly due to great and rapid developments in information and communication technologies (ICT) and in particular micro- and nanoelectronics. This has been possible thanks to the Silicon semiconductor technology that has done marvels for the advancement of our Society, who has benefited tremendously from its versatile use and amazing capabilities. However, the miniaturization of circuits seems to have reached a possible halt, since transistors can only be shrunk down to a certain size and not further beyond. To ensure the continued progress of electronic technology and fulfill the future demands of Society, a rapidly expanding research effort is focused on finding transformative technologies by employing alternative materials for the next-generation of nanoelectronic devices. Particularly, the fascinating two-dimensional materials have attracted a world-wide attention in the recent years due to its extraordinary properties that suit for future flexible and low-power consumption electronics devices. Although there are thousands of candidate materials in portfolio, their use in integrated 2D-Si CMOS applications and for future devices beyond CMOS technology require further research and engineering efforts to overcome notable challenges. Thus, GO2NANO is proposed to undertake ground-breaking research that will contribute to the advance in the maturation 2D nanodevices by targeting the following challenges: 2D materials growth, materials interface characterization and contact fabrication. This research will contribute to the understanding of the chemical and electronic nature and role of defects and impurities, facilitating a rational development and control of the operation mode of unprecedented 2D-based transistors suitable for their co-integration with CMOS technology.

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Record created 2021-10-10, last modified 2023-02-08

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