INTERFAST

Gated INTERfaces for FAST information processing

Grant period2021-05-01 - 2024-10-31
Funding bodyEuropean Union
Call numberH2020-FETOPEN-2018-2019-2020-01
Grant number965046
IdentifierG:(EU-Grant)965046

Note: INTERFAST will develop a novel technological platform for the voltage control of interfacial magnetism. The key idea is to manipulate, via a gate, the hybrid states at the interface between a magnetic material and an organic layer, in a way to affect the effective spin-orbit coupling at such interface. This will allow us to actively control the interfacial magnetism of a wide range of magnetic and supporting compounds, thus providing a universal platform, which is not specific of the rare magnets having massive voltage-control magneto-crystalline anisotropy coefficients. INTERFAST will demonstrate the applicability of this technology to a range of key spintronic functions, encompassing voltage control of magnetisation reversal at fJ/bit energy cost, drastic reduction of the spin-orbit-torque switching currents, and ultrafast THz information processing in all-metallic spintronic devices aided by gateable hybridisation unit.
   

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 Record created 2021-10-10, last modified 2023-02-19