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Home > GSI as publisher > Non-ionizing radiation hardness of CMOS Monolithic Active Pixel Sensors manufactured in a 0.18$\mu$m CMOS process
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Non-ionizing radiation hardness of CMOS Monolithic Active Pixel Sensors manufactured in a 0.18$\mu$m CMOS process - GSI-SR2014-MU-NQM-CBM-14
 
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