Charge states and energy loss of 300-MeV/u $U^{73+}$ ions channeled in a silicon crystal

Dauvergne, D.; Poizat, J-C.; Cue, N.; Andersen, J.; Remillieux, J.; Schmaus, D.; Nickel, F.; Politis, M.; Böckstiegel, C.; Stöhlker, Th.; Kirsch, R.; Münzenberg, G.; Magel, A.; Scheidenberger, C.; Cohen, C.; Czajkowski, S.; Andriamonje, S.; Kandler, T.; Forster, J.; Suzuki, T.; Geissel, H.; Chevallier, M.; L’Hoir, A.; Toulemonde, M.; Irnich, H.; Pivovarov, Yu.; Mokler, P.

doi:10.1103/PhysRevA.59.2813

Charge states and energy loss of 300-MeV/u $U^{73+}$ ions channeled in a silicon crystal

Dauvergne, D. (Corresponding author) ; Scheidenberger, C.GSI* ; L’Hoir, A. ; Andersen, J. ; Andriamonje, S. ; Böckstiegel, C. ; Chevallier, M. ; Cohen, C. ; Cue, N. ; Czajkowski, S.GSI* ; Forster, J. ; Geissel, H.GSI* ; Irnich, H. ; Kandler, T.GSI* ; Kirsch, R. ; Magel, A. ; Mokler, P.GSI* ; Münzenberg, G.GSI* ; Nickel, F.GSI* ; Pivovarov, Y. ; Poizat, J.-C. ; Politis, M. ; Remillieux, J. ; Schmaus, D. ; Stöhlker, T.GSI* ; Suzuki, T.GSI* ; Toulemonde, M.

1999
APS College Park, Md.

Physical review / A 59(4), 2813-2826 (1999) [10.1103/PhysRevA.59.2813]

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Please use a persistent id in citations: doi:10.1103/PhysRevA.59.2813

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ddc:530

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Research Program(s):

899 - ohne Topic (POF2-899) (POF2-899)

Database coverage:
Medline

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