Journal Article

GSI-2020-00942

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Progress in detector properties of heteroepitaxial diamond grown by chemical vapor deposition on Ir/YSZ/Si(001) wafers

Berdermann, E.GSI* ; Afanaciev, K. ; Ciobanu, M.GSI* ; Fischer, M. ; Gsell, S. ; Kiš, M.GSI* ; Lagomarsino, S. ; Lohmann, W. ; Mayr, M. ; Pomorski, M. ; Rahman, M. S. ; Schmidt, C. J.GSI* ; Sciortino, S. ; Schreck, M. ; Stehl, C. ; Träger, M.GSI*

2019
Elsevier Science Amsterdam [u.a.]

This record in other databases:

Please use a persistent id in citations: doi:10.1016/j.diamond.2019.05.006  doi:10.15120/GSI-2020-00942

Note: BMBF Contract Nos. 05K09WA1 and 03V0077; Postprint Embargo 24M; © 2019 Elsevier B.V.

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Contributing Institute(s):

1. Detektorlabor (DTL)

Research Program(s):

1. 632 - Detector technology and systems (POF3-632) (POF3-632)
2. HADRONPHYSICS2 - Study of Strongly Interacting Matter (227431) (227431)
3. HADRONPHYSICS3 - Study of Strongly Interacting Matter (283286) (283286)

Appears in the scientific report 2020

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Database coverage:
; ; Clarivate Analytics Master Journal List ; Current Contents - Engineering, Computing and Technology ; Current Contents - Physical, Chemical and Earth Sciences ; Ebsco Academic Search ; Essential Science Indicators ; IF < 5 ; JCR ; SCOPUS ; Science Citation Index ; Science Citation Index Expanded ; Web of Science Core Collection

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